Qundao Xu1,2,†, Meng Xu3,†, Siqi Tang1, Shaojie Yuan1, Ming Xu1,2,*, Wei Zhang4, Xian-Bin Li5, Zhongrui Wang3, Xiangshui Miao1,2,*, Chengliang Wang1, Matthias Wuttig6,7,*
华中科技大学缪向水教授、徐明教授，德国亚琛工业大学Matthias Wuttig院士
1 Wuhan National Laboratory for Optoelectronics, School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, the People's Republic of China
2 Hubei Yangtze Memory Laboratories, Wuhan, the People's Republic of China
3 Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong, the People's Republic of China
4 Center for Alloy Innovation and Design (CAID), State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, the People's Republic of China
5 State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, the People's Republic of China
6 Institute of Physics (IA), RWTH Aachen University, Aachen, Germany
7 PGI 10 (Green IT), Forschungszentrum Jülich GmbH, Jülich, Germany
† Qundao Xu and Meng Xu contributed equally to this work.
